Asian Journal of Research and Reviews in Physics

The performance and efficiency of photovoltaic (PV) modules are affected by various environmental factors, including solar radiation, temperature, humidity, and magnetic fields. In this study, one PV module was installed with an applied magnetic field, while another module, installed without the magnetic field, served as the control. Both modules were mounted on a platform 4 meters above sea level in a horizontal position facing the sun. The solar power level at the surface of the PV modules was measured using a digital solar power meter. The cell temperature and relative humidity at the surface of the PV modules were measured using a digital infrared thermometer and a hygrometer, respectively. An intelligent maximum power point tracker was utilized to determine the output electrical parameters of the PV modules under specific real-time atmospheric conditions. The short circuit current was measured using a digital multimeter. The results indicate that the magnetic field has little effect on the open circuit voltage. However, the control module outperformed the module subjected to the magnetic field in terms of maximum voltage, short circuit current, and maximum current production. This led to the control module generating more electrical power and achieving higher efficiency. Notably, both photovoltaic modules exhibited the same efficiency below a solar power level of 170 W/m². Moreover, the findings demonstrate that the magnetic field significantly reduces the output power of the PV module. At a constant solar power of 1000 W/m² and a humidity level of 50%, the difference in output power between the two PV modules was 10.6 W at a temperature of 49 °C and 9.9 W at 51 °C. This corresponds to a power drop of 20.4% and 20%, respectively. Additionally, at these temperatures (49 °C and 51 °C), the magnetic field decreased the module's efficiency by 13% and 12%, respectively, highlighting the detrimental effect of the magnetic field on PV module performance. The magnetic field enhances the electron-hole recombination rate in the silicon crystal, reducing the charge carrier lifetime and lowering the output voltage and current.