Asian Journal of Research and Reviews in Physics <p style="text-align: justify;"><strong>Asian Journal of Research and Reviews in Physics (ISSN: 2582-5992)</strong> aims to publish high-quality papers in all areas of 'physics'. The journal also encourages the submission of useful reports of negative results. This is a quality controlled, OPEN peer-reviewed, open access INTERNATIONAL journal.</p> <p style="text-align: justify;">This is an open access journal which means that all content is freely available without charge to the user or his/her institution. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, without asking prior permission from the publisher or the author. This is in accordance with the BOAI definition of open access.</p> SCIENCEDOMAIN international en-US Asian Journal of Research and Reviews in Physics 2582-5992 Electrical Characterization of Chemically Grown CdS and CdTe Thin Films for Solar Cell Application <p>Thin films of Cadmium Sulphide (CdS) and Cadmium Telluride (CdTe) have gained a great deal of interest due to their potential applications in solar cells. Deposition of CdS and CdTe thin films were performed on Soda Lime glass and FTO substrate at 400℃ and 300℃ respectively using spray pyrolysis technique. The Hall Effect property was measured for the deposited CdS and CdTe films. These results shows the resistivity and mobility of CdS films deposited at 400℃ were 1.588×10<sup>4</sup> Ωcm and 5.619×10<sup>2</sup> cm<sup>2</sup>/Vs, respectively, The annealed CdTe thin film had a resistivity value of 1.016×10<sup>4</sup> Ωcm, while the annealed and etched CdTe thin film had a resistivity value of 4.52×10<sup>4</sup> Ωcm, The resultant films are observed to be good to make a solar cell with CdS as a window layer and CdTe as absorber layer.</p> Mani Tsoho A. B. Ahmed A. O. Musa Mansur Said ##submission.copyrightStatement## 2022-12-21 2022-12-21 1 6 10.9734/ajr2p/2022/v6i4123 Calculation of Cohesive Energies of 3-D Bismuth Selenide (Bi2Se3) and Bismuth Antimony BiSb Topological Insulators: DFT Study <p>The cohesive energies of 3-dimensional (3-D) topological insulators bismuth antimony (BiSb) and bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>) were calculated. The Fritz Haber Institute Ab-initio molecular simulations (FHI-aims) code was employed for this calculation.&nbsp; The output files of the FHI-aims code were used during the computation and the total energies at each number of iterations for single free atoms and bulk were then calculated. The results from this work revealed that bismuth atom becomes stable at 3<sup>rd</sup> iteration meanwhile both selenium and antimony atoms gain stability at the 5<sup>th</sup> iteration. The results also showed that bismuth antimony acquire stability at the 3<sup>rd</sup> iteration and bismuth selenide gain stability at 9<sup>th</sup> iteration. This implies that among the free atoms studied in this work bismuth atom is more stable and for the bulk bismuth antimony is more stable. The cohesive energies of BiSb and Bi<sub>2</sub>Se<sub>3</sub> were calculated using the optimized parameters. The results obtained from the calculation of the cohesive energies in this work were 1.02eV and 1.76eV for BiSb and Bi<sub>2</sub>Se<sub>3</sub> respectively. This results compared reasonably well with experimental results and have little percentage errors of 1.30% for bismuth antimony and 29.55% for bismuth selenide. The deviation observed in this work may be due to the DFT calculation of the solid rather than the atoms themselves.</p> E. C. Hemba T. J. Ikyumbur E. A. Trisma F. Gbaorun F. Aungwa ##submission.copyrightStatement## 2022-12-23 2022-12-23 7 17 10.9734/ajr2p/2022/v6i4124